Semiconductor production device and production method for semiconductor device

ABSTRACT

The present invention provides a semiconductor manufacturing apparatus capable of shortening TAT by completing a plurality of processes including plating, annealing, and CMP-in-twice or the like in copper wiring process in a single manufacturing apparatus, and is also capable of suppressing costs for consumable materials by replacing the CMP step with other step. The apparatus of the present invention comprises an electrolytic plating chamber ( 11 ) for performing electrolytic plating of a substrate ( 91 ), an electrolytic polishing chamber ( 21 ) for performing electrolytic polishing of the substrate, and a conveying chamber ( 81 ) having installed therein a conveying instrument ( 83 ) responsible for loading/unloading of the substrate to or from the electrolytic plating chamber, and to or from he electrolytic polishing chamber, and is connected respectively to the electrolytic plating chamber and the electrolytic polishing chamber. The conveying chamber may further have connected thereto an electroless plating chamber, an annealing chamber, a liquid treatment chamber or the like.

FIELD OF THE INVENTION

[0001] The present invention relates to a semiconductor manufacturingdevice and a method for manufacturing semiconductor devices, and morespecifically to those conducting two process steps of electrolyticcopper plating and electrolytic polishing, or four process steps ofelectrolytic copper plating, annealing, electrolytic polishing andselective CoWP electroless plating.

BACKGROUND ART

[0002] Copper wiring is becoming to more highly be appreciated for usein micro-devices in which circuit delay due to parasitic resistance andparasitic capacitance of the wiring is predominant, since it can achievelower resistivity, lower-capacitance and higher reliability as comparedwith those achieved by aluminum wiring. Damascene processes are widelyaccepted as the most general method for forming copper wiring. Of thedamascene processes, dual-damascene process is most widely accepted inview of production costs. The copper wiring process has thus beenexpected to be reduced in cost as compared with that in the conventionalaluminum wiring process through employment of the dual-damasceneprocess.

[0003] In a typical dual-damascene process, a barrier layer is formed ingrooves and connection holes, and the individual process steps offorming a copper seed layer by sputtering, filling copper into thegrooves and connection holes by electrolytic plating, growing coppercrystal by annealing, removing excessive copper by chemical mechanicalpolishing (referred to as CMP hereinafter), removing an excessivebarrier layer by CMP, and forming an anti-oxidative layer by chemicalvapor deposition (referred to as CVD hereinafter) on a surface of copperfilled in the grooves are carried out. All of these process steps havebeen carried out using independent apparatuses such as an electrolyticplating apparatus, a CMP apparatus and a CVD apparatus.

[0004] However, in the forming process of the copper wiring, a pluralityof process steps such as a step for forming the copper seed layer, astep for copper plating, a step for annealing and two CMP steps werecarried out respectively in the corresponded apparatuses. Accordingly,there has been a problem of a long TAT (turn-around time).

[0005] In addition, polishing of the copper and the barrier layer by CMPrequires separate slurries and separate pads for the copper and thebarrier layer, respectively, which makes the process complicated. Thisraises one reason for the cost higher than that of the conventionalaluminum wiring. In particular for CMP, a large cost for consumablematerials such as polishing slurry and polishing pad has been a seriousproblem.

DISCLOSURE OF THE INVENTION

[0006] The present invention is to provide a semiconductor manufacturingapparatus and a method for manufacturing semiconductor devices which areaimed at solving the foregoing problems.

[0007] A first semiconductor manufacturing apparatus according to thepresent invention has installed therein an electrolytic plating chamberwith which an electrolytic plating apparatus responsible forelectrolytic plating of a substrate is constructed, an electrolyticpolishing chamber with which an electrolytic polishing apparatusresponsible for electrolytic polishing of a substrate is constructed,and a conveying chamber having installed therein a conveying instrumentresponsible for loading/unloading of the substrate to or from theelectrolytic plating chamber, and to or from the electrolytic polishingchamber, and being connected respectively to the electrolytic platingchamber and the electrolytic polishing chamber.

[0008] The above-mentioned first semiconductor manufacturing apparatushas the electrolytic plating chamber with which the electrolytic platingapparatus is constructed and the electrolytic polishing chamber withwhich the electrolytic polishing apparatus is constructed; and theindividual chambers are connected to the conveying chamber provided withthe conveying instrument, so that both of electrolytic plating andelectrolytic polishing are successively accomplished within a singleapparatus. Moreover, these processes are successively accomplishedwithout exposing the substrate to the air but only by conveying thesubstrate via the conveying chamber, so that TAT will considerably beshortened. The apparatus is also advantageous in that the costs for theconsumable materials are not so expensive as in CMP, since the removalstep relies upon electrolytic polishing, not upon CMP.

[0009] A second semiconductor manufacturing apparatus according to thepresent invention has installed therein an electrolytic plating chamberwith which an electrolytic plating apparatus responsible forelectrolytic plating of a substrate is constructed, an electrolyticpolishing chamber with which an electrolytic polishing apparatusresponsible for electrolytic polishing of a substrate is constructed, anelectroless plating chamber with which an electroless plating apparatusresponsible for electroless plating of the substrate is constructed, anannealing chamber with which an annealing apparatus responsible forannealing of the substrate is constructed, and a conveying chamberhaving installed therein a conveying instrument responsible forloading/unloading of the substrate to or from the electrolytic platingchamber, to or from the electrolytic polishing chamber, to or from theelectroless plating chamber, and to or from the annealing chamber, andbeing connected respectively to the electrolytic plating chamber, theelectrolytic polishing chamber, the electroless plating chamber and theannealing chamber.

[0010] The above-mentioned second semiconductor manufacturing apparatushas an electrolytic plating chamber with which an electrolytic platingapparatus is constructed with which the electrolytic polishing apparatusis constructed, the electrolytic polishing chamber, the electrolessplating chamber and the annealing chamber; and the individual chambersare connected to the conveying chamber provided with the conveyinginstrument, so that all of electrolytic plating, electrolytic polishing,electroless plating and annealing are successively accomplished within asingle apparatus. Moreover, these processes are successivelyaccomplished without exposing the substrate to the air but only byconveying the substrate to or from the individual chambers via theconveying chamber, so that TAT will considerably be shortened. Theapparatus is also advantageous in that the costs for the consumablematerials are not so expensive as in CMP, since the removal step reliesupon electrolytic polishing, not upon CMP.

[0011] A first method for manufacturing a semiconductor device accordingto the present invention is comprised of a step of forming anelectrolytic plated film by electrolytic plating process on a substrate;and a step of successively removing at least a part of the electrolyticplated film formed on the substrate by electrolytic polishing processwithout exposing the substrate to an oxidative atmosphere.

[0012] The above-mentioned first method for manufacturing asemiconductor device can successively accomplish electrolytic platingand electrolytic polishing, so that TAT will considerably be shortenedas compared with that in the conventional manufacturing method in whichthe individual processes were accomplished by wandering from apparatusto apparatus, each of which is only responsible for a single processing.

[0013] A second method for manufacturing a semiconductor deviceaccording to the present invention is comprised of a step of forming anelectrolytic plated film by electrolytic plating process on a substrate;a step of successively removing at least a part of the electrolyticplated film formed on the substrate by electrolytic polishing processwithout exposing the substrate after the electrolytic plating to anoxidative atmosphere; a step of annealing the substrate after theelectrolytic polishing without exposing the substrate to the oxidativeatmosphere; and a step of forming an electroless plated film byelectroless plating process on the substrate without exposing thesubstrate to the oxidative atmosphere.

[0014] The above-mentioned second method for manufacturing asemiconductor device can successively accomplish electrolytic plating,electrolytic polishing and electroless plating without exposing thesubstrate to an oxidative atmosphere, and can also accomplish annealingas being continued from the electrolytic plating, electrolytic polishingor electroless plating, so that TAT will considerably be shortened ascompared with that in the conventional manufacturing method in which theindividual processes were accomplished by wandering from apparatus toapparatus, each of which is only responsible for a single processing.

BRIEF DESCRIPTION OF THE DRAWINGS

[0015]FIG. 1 is a schematic structural view of one embodiment of a firstsemiconductor manufacturing apparatus according to the presentinvention;

[0016]FIG. 2 is a schematic structural view of an electrolytic platingchamber;

[0017]FIG. 3 is a schematic structural view of an electrolytic polishingchamber;

[0018]FIG. 4 is a schematic structural view of one embodiment of asecond semiconductor manufacturing apparatus according to the presentinvention;

[0019]FIG. 5 is a schematic structural view of an electroless platingchamber;

[0020]FIG. 6 is a schematic structural view of an annealing chamber; and

[0021]FIGS. 7A to 7F are sectional views showing one embodiment of asecond method for manufacturing a semiconductor device according to thepresent invention.

BEST MODE FOR CARRYING OUT THE INVENTION

[0022] An embodiment of a first semiconductor manufacturing apparatusaccording to the present invention will be explained referring toschematic structural views shown in FIGS. 1 to 3.

[0023] As shown in FIG. 1, a first semiconductor manufacturing apparatus1 comprises an electrolytic plating chamber 11 with which anelectrolytic plating apparatus responsible for electrolytic plating of asubstrate is constructed, an electrolytic polishing chamber 21 withwhich an electrolytic polishing apparatus responsible for electrolyticpolishing of a substrate is constructed, and a conveying chamber 81connected respectively to the electrolytic plating chamber 11 and theelectrolytic polishing chamber 21.

[0024] As shown in FIG. 2, the electrolytic plating chamber 11 hasinstalled therein a holder 12 for holding a substrate 91, which isdesigned so as to freely ascend or descend along a direction indicatedby an arrow A. The electrolytic plating chamber has a cup 13 at aposition opposed to the holder 12. The cup 13 is capable of forming aclosed space, into which an electrolytic plating solution (not shown)can be filled, together with the substrate 91 held by the holder 12 whenthe holder 12 is elevated. The elevated status is illustrated with atwo-dot chain line. To the cup 13, an electrolytic plating solutionsupply portion (not shown) for supplying an electrolytic platingsolution is connected.

[0025] The chamber is also provided with a nozzle 14 for supplying aprocess liquid to the surface of the substrate 91 held on the holder 12.The nozzle 14 may be, for example, a spray nozzle, a shower nozzle, orthose having other constitutions. The nozzle 14 is designed to supply acleaning liquid 51 (illustrated with a broken line), for example, as theprocess liquid onto the substrate 91.

[0026] On a side portion of the electrolytic plating chamber 11, anentrance 16 through which the substrate 91 is loaded or unloaded isprovided. The entrance 16 is provided with a gate valve (not shown), forexample, and is connected to the conveying chamber 81. At the bottomportion of the electrolytic plating chamber 11, a drain 17 through whichan exhausted electrolytic plating solution and used cleaning liquid aredischarged is provided. The electrolytic plating chamber 11 has alsoconnected thereto a non-oxidative gas supply portion 18 for keeping thechamber atmosphere non-oxidative, and has further connected thereto anexhaust portion 19 through which the non-oxidative gas is discharged. Itshould now be noted that although the holder 12 was designed to freelyascend or descend in the foregoing constitution, the cup 13 may beallowed to freely ascend or descend instead while keeping the holder 12in a fixed position.

[0027] As shown in FIG. 3, the electrolytic polishing chamber 21 hasinstalled therein a holder 22 for holding a substrate 91, which isdesigned so as to freely ascend or descend along a direction indicatedby an arrow A. The electrolytic polishing chamber 21 has a cup 23 at aposition opposed to the holder 22. The cup 23 is capable of forming aclosed space, into which an electrolytic polishing solution (not shown)can be filled, together with the substrate 91 held by the holder 22 whenthe holder 22 is elevated. Such elevated status is illustrated with atwo-dot chain line. To the cup 23, an electrolytic polishing solutionsupply portion (not shown) for supplying electrolytic polishing solutionis connected.

[0028] The chamber is also provided with first and second nozzles 24, 25for supplying process liquids to the surface of the substrate 91 held onthe holder 22. The nozzles 24, 25 may be, for example, spray nozzles,shower nozzles, or those having other constitutions. The first nozzle 24is designed to supply, for example, the cleaning liquid 51 as theprocess liquid onto the substrate 91. The second nozzle 25 is typicallydesigned to supply, for example, an etching solution 52 as the processliquid onto the substrate 91.

[0029] On a side portion of the electrolytic polishing chamber 21, anentrance 26 through which the substrate 91 is loaded or unloaded isprovided. The entrance 26 is provided with a gate valve (not shown), forexample, and is connected to the conveying chamber 81. At a bottomportion of the electrolytic polishing chamber 21, a drain 27 throughwhich an exhausted electrolytic polishing solution, an etching solutionand a used cleaning liquid are discharged is provided. The electrolyticpolishing chamber 21 has also connected thereto a non-oxidative gassupply portion 28 for keeping the chamber atmosphere non-oxidative, andhas further connected thereto an exhaust portion 29 through which thenon-oxidative gas is discharged. It should now be noted that althoughthe holder 22 was designed to freely ascend or descend in the foregoingconstitution, the cup 23 may be allowed to freely ascend or descendinstead while keeping the holder 22 in a fixed position.

[0030] As shown in FIG. 1, the conveying chamber 81 is provided with aconveying instrument 83 responsible for loading/unloading of thesubstrate to or from the electrolytic plating chamber 11 and to or fromthe electrolytic polishing chamber 21, and is connected via the gatevalve to the electrolytic plating chamber 11 and the electrolyticpolishing chamber 21 respectively at the entrance for loading/unloadingthe substrate 91.

[0031] The first semiconductor manufacturing apparatus has theelectrolytic plating chamber 11 with which an electrolytic platingapparatus is constructed and the electrolytic polishing chamber 21 withwhich an electrolytic polishing apparatus is constructed, and thesechambers are connected to the conveying chamber 81 provided with theconveying instrument 83, so that electrolytic plating and electrolyticpolishing can successively be accomplished within a single apparatushaving a plurality of functions. Moreover, the substrate cansuccessively be transferred simply through the conveying chamber 81only, without exposing the substrate to the air, so that TAT canconsiderably be shortened. The apparatus is also advantageous in thatthe costs for the consumable materials are not so expensive as in CMP,since the removal step relies upon electrolytic polishing, not upon CMP.

[0032] An embodiment of a second semiconductor manufacturing apparatusaccording to the present invention will be explained referring to theschematic drawing in FIG. 4, the foregoing FIGS. 2 and 3, and schematicstructural views in FIGS. 5 and 6. It should be noted that parts similarto those previously explained referring to FIGS. 1 to 3 will have thesame reference numerals.

[0033] As shown in FIG. 4, a second semiconductor manufacturingapparatus 2 has an electrolytic plating chamber 11 with which anelectrolytic plating apparatus responsible for electrolytic plating ofthe substrate is constructed, an electrolytic polishing chamber 21 withwhich an electrolytic polishing apparatus responsible for electrolyticpolishing of the substrate is constructed, an electroless platingchamber 31 with which an electroless plating apparatus responsible forelectroless plating of the substrate is constructed, an annealingchamber 41 with which an annealing apparatus responsible for annealingof the substrate is constructed, and a conveying chamber 81 to which heelectrolytic plating chamber 11, the electrolytic polishing chamber 21,the electroless plating chamber 31 and the annealing chamber 41 areconnected. The conveying chamber 81 has also connected thereto anelectrolytic plating chamber 61 for reinforcing and/or forming a platingseed layer, and a liquid treatment chamber 71 for supplying a processliquid to the substrate.

[0034] The electrolytic plating chamber 11 has a structure similar tothat previously explained referring to FIG. 2. That is, as shown in FIG.2, the electrolytic plating chamber 11 has installed therein a holder 12for holding a substrate 91, which is designed so as to freely ascend ordescend along a direction indicated by an arrow A. The electrolyticplating chamber has a cup 13 at a position opposed to the holder 12. Thecup 13 is capable of forming a closed space, into which an electrolyticplating solution (not shown) can be filled, together with the substrate91 held by the holder 12 when the holder 12 is elevated. Such elevatedstatus is illustrated with a two-dot chain line. To the cup 13, anelectrolytic plating solution supply portion (not shown) for supplyingelectrolytic plating solution is connected. The cup 13 has furtherconnected thereto a power source for supplying electric power necessaryfor electrolytic plating, although not shown.

[0035] The chamber is also provided with a nozzle 14 for supplying aprocess liquid to a surface of the substrate 91 held on the holder 12.The nozzle 14 may be, for example, a spray nozzle, a shower nozzle, orthose having other constitutions. The nozzle 14 is designed to supply acleaning liquid 51 (illustrated with a broken line), for example, as theprocess liquid onto the substrate 91.

[0036] On a side portion of the electrolytic plating chamber 11, anentrance 16 through which the substrate 91 is loaded or unloaded isprovided. The entrance 16 is provided with a gate valve (not shown), forexample, and is connected to the conveying chamber 81. At a bottomportion of the electrolytic plating chamber 11, a drain 17 through whichan exhausted electrolytic plating solution and used cleaning liquid aredischarged is provided. The electrolytic plating chamber 11 has alsoconnected thereto a non-oxidative gas supply portion 18 for keeping thechamber atmosphere non-oxidative, and further connected with an exhaustportion 19 through which the non-oxidative gas is discharged. It shouldnow be noted that although the holder 12 was designed to freely ascendor descend in the foregoing constitution, the cup 13 may be allowed tofreely ascend or descend instead while keeping the holder 12 in a fixedposition.

[0037] The electrolytic polishing chamber 21 has a structure similar tothat previously explained referring to FIG. 3. That is, as shown in FIG.3, the electrolytic polishing chamber 21 has installed therein a holder22 for holding a substrate 91, which is designed so as to freely ascendor descend along a direction indicated by an arrow A. The electrolyticpolishing chamber 21 has a cup 23 at a position opposed to the holder22. The cup 23 is capable of forming a closed space, into which anelectrolytic polishing solution (not shown) can be filled, together withthe substrate 91 held by the holder 22 when the holder 22 is elevated.Such elevated status is illustrated with a two-dot chain line. To thecup 23, an electrolytic polishing solution supply portion (not shown)for supplying electrolytic polishing solution is connected. The cup 23has further connected thereto a power source for supplying electricpower necessary for electrolytic polishing, although not shown.

[0038] The chamber is also provided with first and second nozzles 24, 25for supplying process liquids to a surface of the substrate 91 held onthe holder 22. The nozzles 24, 25 may be, for example, spray nozzles,shower nozzles, or those having other constitutions. The first nozzle 24is designed to supply, for example, a cleaning liquid 51 as the processliquid onto the substrate 91. The second nozzle 25 is designed tosupply, for example, an etching solution 52 as the process liquid ontothe substrate 91.

[0039] On a side portion of the electrolytic polishing chamber 21, anentrance 26 through which the substrate 91 is loaded or unloaded isprovided. The entrance 26 is provided with a gate valve (not shown), forexample, and is connected to the conveying chamber 81. At a bottomportion of the electrolytic polishing chamber 21, a drain 27 throughwhich an exhausted electrolytic plating solution, an etching solutionand a used cleaning liquid are discharged is provided. The electrolyticpolishing chamber 21 has also connected thereto a non-oxidative gassupply portion 28 for keeping the chamber atmosphere non-oxidative, andfurther connected with an exhaust portion 29 through which thenon-oxidative gas is discharged. It should now be noted that althoughthe holder 22 was designed to freely ascend or descend in the foregoingconstitution, the cup 23 may be allowed to freely ascend or descendinstead while keeping the holder 22 in a fixed position.

[0040] As shown in FIG. 5, the electroless plating chamber 31 hasinstalled therein a holder 32 for holding a substrate 91, which isdesigned so as to freely ascend or descend along a direction indicatedby an arrow. The electroless plating chamber 31 has a cup 33 at aposition opposed to the holder 32. The cup 33 is capable of forming aclosed space, into which an electroless plating solution (not shown) canbe filled, together with the substrate 91 held by the holder 32 when theholder 32 is elevated. Such elevated status is illustrated with atwo-dot chain line. To the cup 33, an electroless plating solutionsupply portion (not shown) for supplying electroless plating solution isconnected.

[0041] The chamber is also provided with a nozzle 34 for supplying aprocess liquid to a surface of the substrate 91 held on the holder 32.The nozzle 34 may be, for example, a spray nozzle, a shower nozzle, orthose having other constitutions. The nozzle 34 is designed to supply acleaning liquid 51 (illustrated with a broken line), for example, as theprocess liquid onto the substrate 91.

[0042] On a side portion of the electroless plating chamber 31, anentrance 36 through which the substrate 91 is loaded or unloaded isprovided. The entrance 36 is provided typically with a gate valve (notshown), for example, and is connected to the conveying chamber 81. Atthe bottom portion of the electroless plating chamber 31, a drain 37through which an exhausted electroless plating solution and a usedcleaning liquid are discharged is provided. The electroless platingchamber 31 has also connected thereto a non-oxidative gas supply portion38 for keeping the chamber atmosphere non-oxidative, and has furtherconnected thereto an exhaust portion 39 through which the non-oxidativegas is discharged. It should now be noted that although the holder 32was designed to freely ascend or descend in the foregoing constitution,the cup 33 may be allowed to freely ascend or descend instead whilekeeping the holder 32 in a fixed position.

[0043] As shown in FIG. 6, the annealing chamber 41 with which anannealing apparatus is constructed has installed therein a holder 42 forholding a substrate 91. The annealing chamber 41 has a heat source 43for heating the substrate 91 at a position opposed to the holder 42.Besides the heat source 43, it is also allowable to provide another heatsource within the holder 42. For a case where the annealing apparatus isprovided as a furnace apparatus, the heat source 43 is constructed witha heating wire, for example. For a case where the annealing apparatus isprovided as an RTA (rapid thermal annealing) apparatus, the heat source43 is constructed with a heating lamp, for example. The annealingchamber 41 has also connected thereto a gas supply portion 48 and a gasexhaust portion 49, both of which contribute to formation of anannealing atmosphere. On a side portion of the annealing chamber 41, anentrance 46 through which the substrate 91 is loaded or unloaded isprovided. The entrance 46 is provided typically with a gate valve (notshown), for example, and is connected to the conveying chamber 81.

[0044] The electrolytic plating chamber 61 for reinforcing and/orforming the plating seed layer can be constructed similarly to thatpreviously described referring to FIG. 2.

[0045] The liquid treatment chamber 71 for supplying a process liquid tothe substrate has installed therein a holder for holding the substrate,and one or more nozzle for supplying process liquid to the substrateheld on the holder. Shape of the nozzle may be any of a tubular nozzle,a spray nozzle and a shower nozzle. The nozzle may be positionedstraight upward over the center of the substrate held on the holder, ormay be obliquely upward over the substrate, so far as the nozzle canuniformly supply the process liquid over the entire surface of thesubstrate. At a bottom portion of the liquid treatment chamber 71, adrain (not shown) through which the process liquid is discharged isprovided. The process liquid may be a cleaning liquid for cleaning thesubstrate, which is typified by pure water. It may also be designed tosupply an etching solution. On a side portion of the liquid treatmentchamber 71, an entrance through which the substrate 91 is loaded orunloaded is provided. The entrance is provided with a gate valve (notshown), for example, and is connected to the conveying chamber 81.

[0046] As previously shown in FIG. 4, the conveying chamber 81 hasinstalled therein a conveying instrument 83 which is responsible forloading/unloading of the substrate to or from the electrolytic platingchamber 11, loading/unloading of the substrate to or from theelectrolytic polishing chamber 21, loading/unloading of the substrate toor from the electroless plating chamber 31, loading/unloading of thesubstrate to or from the annealing chamber 41, loading/unloading of thesubstrate to or from the electrolytic plating chamber 61, andloading/unloading of the substrate to or from the liquid treatmentchamber 71, and is connected respectively to the electrolytic platingchamber 11, the electrolytic polishing chamber 21, the electrolessplating chamber 31, the annealing chamber 41, the electrolytic platingchamber 61 and the liquid treatment chamber 71 via the gate valvethrough which the substrate 91 is loaded or unloaded.

[0047] The above-mentioned second semiconductor manufacturing apparatus2 has the electrolytic plating chamber 11 with which an electrolyticplating apparatus is constructed, the electrolytic polishing chamber 21with which an electrolytic polishing apparatus is constructed, theelectroless plating chamber 31 with which an electroless platingapparatus is constructed, and the annealing chamber 41 with which anannealing apparatus is constructed; and all of the chambers areconnected to the conveying chamber 81 having installed therein theconveying instrument 83, so that electrolytic plating, electrolyticpolishing, electroless plating and annealing can successively beaccomplished within a single manufacturing apparatus having a pluralityof functions. Moreover, the substrate can successively be transferred toor from the individual chambers simply through the conveying chamber 81only, without exposing the substrate to the air, so that TAT canconsiderably be shortened. The apparatus is also advantageous in thatthe costs for the consumable materials are not so expensive as in CMP,since the removal step relies upon electrolytic polishing, not upon CMP.

[0048] The conveying chamber 81 of the individual semiconductormanufacturing apparatus described in the above may have connectedthereto, via gate valves, substrate stock chambers (not shown)separately housing pre-processing substrates and post-processingsubstrates.

[0049] The individual holders installed in the electrolytic platingchambers 11, 61, electrolytic polishing chamber 21, electroless platingchamber 31 and liquid treatment chamber 71 may be constructed so as torotate at high speed to thereby effect spin drying of the substrate 91.That is, the holder may have a structure similar to that of a commonlyknown single wafer spin drier.

[0050] Next paragraphs will describe a case where the firstsemiconductor manufacturing apparatus previously explained referring toFIGS. 1 to 3 is used, as an exemplary embodiment of a first method formanufacturing a semiconductor device.

[0051] First, the substrate 91 is transferred using the conveyinginstrument 83 from the conveying chamber 81 onto the holder 12 in theelectrolytic plating chamber 11. The chamber at this time is preferablyconditioned so as to have a non-oxidative atmosphere.

[0052] The holder 12 in the electrolytic chamber 11 is then elevated soas to form a closed space in the cup 13. The closed space is formed withthe cup 13 and the substrate 91 held on the holder 12, and the substrateis then subjected to electrolytic plating using an electrolytic platingsolution (not shown) filled in the closed space. After completion of theelectrolytic plating, the electrolytic solution filled in the cup 13 isdischarged, and the holder is descended back to the initial position. Acleaning liquid is then supplied form the nozzle 14 onto the substrate91 to thereby effect substrate cleaning. For a case where the holder 12has a rotatable constitution, it is also allowable to rotate the holder12 to thereby effect spin drying.

[0053] Next, the substrate 91 on the holder 12 is transferred using theconveying instrument 83 to the conveying chamber 81, and thentransferred and placed on the holder 22 in the electrolytic polishingchamber 21. In this way, the substrate 91 is transferred to theelectrolytic polishing chamber 21 without being exposed to an oxidativeatmosphere since the substrate 91 is transferred in a closed space fromthe electrolytic plating chamber 11 through the conveying chamber 81 tothe electrolytic polishing chamber 21. The chambers at this time arepreferably conditioned to have a non-oxidative atmosphere.

[0054] The holder 22 in the electrolytic chamber 21 is then elevated soas to form in the cup 23 a closed space surrounded by the substrate 91held on the holder 22 and the cup 23, in which space an electrolyticpolishing solution (not shown) is filled to thereby effect electrolyticpolishing of the substrate. The amount of electrolytic polishing isproperly selected by purposes. After completion of the electrolyticpolishing, the electrolytic plating solution in the cup 23 isdischarged, and the holder 22 is ascended back to the initial position.A cleaning liquid is then supplied from the first nozzle 24 to thesubstrate 91 to thereby rinse the substrate. For a case where etching isrequired, an etching solution is supplied from the second nozzle 25 tothe substrate 91 to carry out etching of the substrate. A cleaningliquid is then supplied again from the first nozzle 24 to the substrate91 to thereby rinse the substrate. For a case where the holder 22 has arotatable constitution, it is also allowable to rotate the holder 22 tocarry out spin drying.

[0055] The above-mentioned first method for manufacturing asemiconductor device can successively accomplish electrolytic platingand electrolytic polishing, so that TAT will considerably be shortenedas compared with that in the conventional manufacturing method in whichthe individual processes were accomplished by wandering from apparatusto apparatus, each of which is only responsible for a single processing.

[0056] Next paragraphs will describe a case where the secondsemiconductor manufacturing apparatus previously explained referring toFIG. 4 is used, as an exemplary embodiment of a second method formanufacturing a semiconductor device referring to process drawings ofFIGS. 7A to 7F. Note that FIGS. 7A to 7F represent the individualprocesses. See FIGS. 2 to 6 for the apparatus responsible for theprocesses.

[0057] In this manufacturing method, the processes are successivelycarried out in the second semiconductor manufacturing apparatus, whichis a so-called cluster tool, as previously explained referring to FIG.4.

[0058] As shown in FIG. 7A, the substrate (for example, a semiconductorsubstrate) 91 has formed thereon a first insulating film 111 in which afirst wiring 112 having a groove wiring structure is formed as, beinginterposed by a barrier layer 112 b. On the first insulating film 111, adiffusion preventing layer 113 is formed so as to cover the first wiring112, and further thereon a second insulating film 114 is formed. Thediffusion preventing layer 113 may have a function as an etching stopperwhen a connection hole is formed. On the second insulating film 114, athird insulating film 115 is formed. The third insulating film 115 hasformed therein a concave portion 116 (referred to as a groove 116,hereinafter), and a connection hole 117 which reaches the first wiring112 from the bottom of the groove 116 so as to penetrate the secondinsulating film 114.

[0059] On an inner surface of the wiring groove 116 and the connectionhole 117, a barrier layer 121 is formed. The barrier layer 121 is madeof, for example, tungsten nitride. On a surface of the barrier layer121, a copper seed layer 122 is further formed by a film formingtechnique such as sputtering. Next in the electrolytic plating chamber61, seed layer reinforcing electrolytic plating for reinforcing the seedlayer is carried out in order to supplement an insufficient thickness ofthe copper seed layer on a side wall of the groove and a side wall ofthe connection hole with a high aspect ratio. It is preferable herein tocondition the chamber so as to have a non-oxidative inner atmosphere.The attached drawing shows the copper seed layer 122 already reinforcedby the electrolytic plating. Then the substrate is cleaned in theelectrolytic plating chamber 61. The cleaning is performed by, forexample, washing with water. The washing with water may also beaccomplished in the liquid treatment chamber 71 after the substrate 91is transferred thereto using the conveying instrument (a conveyingrobot, for example) 83. All transfer of the substrate 91 thereafter willbe responsible for the conveying instrument 83.

[0060] Next as shown in FIG. 7B, the substrate 91 (not shown) istransferred using the conveying instrument 83 onto the holder 12 in theelectrolytic plating chamber 11. It is preferable herein to conditionthe chamber so as to have a non-oxidative inner atmosphere. Byproceeding electrolytic copper plating in the electrolytic platingchamber 11, the groove 116 and connection hole 117 are filled with aconductive layer 123 made of copper. The conductive layer 123 at thistime is also formed over the barrier layer 121 on the third insulatingfilm 115. The drawing illustrates the copper seed layer 122 as beingincluded in the conductive layer 123. In the process sequence of theelectrolytic plating, plating conditions are properly selected so as toplanarize the surface of the conductive layer 123 after the plating, tothereby form the copper plating layer having a flat surface. Thesubstrate 91 is then cleaned in the electrolytic plating chamber 11. Thecleaning is performed by, for example, washing with water.

[0061] Next as shown in FIG. 7C, the substrate 91 is transferred usingthe conveying instrument 83 onto the holder 42 in the annealing chamber41. It is preferable herein to condition the chamber so as to have anon-oxidative inner atmosphere. Thus processed substrate 91 is thenannealed in this annealing chamber 41. The annealing promotes growth ofcopper crystal grains in the conductive layer 123 having fine crystalgrains after the electrolytic plating.

[0062] Next as shown in FIG. 7D, the substrate 91 is transferred usingthe conveying instrument 83 onto the holder 22 in the electrolyticpolishing chamber 21. It is preferable herein to condition the chamberso as to have a non-oxidative inner atmosphere. Electrolytic polishingis then carried out in the electrolytic polishing chamber 21 so as toremove a portion of the conductive layer 123 which resides on thesurface of the insulating film (third insulating film 115), to therebyleave the conductive layer 123 only in the groove 116 and the connectionhole 117.

[0063] Next as shown in FIG. 7E, in the electrolytic polishing chamber21, the barrier layer 121 made of tungsten nitride is removed by wetetching using hydrogen peroxide solution. More specifically, an aqueoussolution of hydrogen peroxide is sprayed over the surface of thesubstrate to thereby dissolve and remove an unnecessary portion of thebarrier layer 121 made of tungsten nitride which resides over the flatsurface. To ensure thorough removal of tungsten nitride from the surfaceof the third insulating film 115, a certain degree of over-etching willbe necessary since the etching of tungsten nitride proceeds in anisotropic manner. As a result, side-etching occurs along the side wallof the groove 116, which makes the upper end 121 t of the barrier layer121 lower than the level of the surface 123 s of the conductive layer123. The substrate 91 is then cleaned in the electrolytic polishingchamber 21. The cleaning is performed by, for example, washing withwater.

[0064] Next as shown in FIG. 7F, the substrate 91 is transferred usingthe conveying instrument 83 onto the holder 32 in the electrolessplating chamber 31. It is preferable herein to condition the chamber soas to have a non-oxidative inner atmosphere. Thus processed substrate 91is then subjected to electroless plating in this electroless platingchamber to thereby selectively form a cobalt tungsten phosphorus (CoWP)coating 124 on an exposed surface of the conductive layer 123.Selectivity of the film formation is ensured by coating the surface ofthe conductive layer 123 with palladium by electroless displacementplating of copper before the CoWP electroless plating is carried out.The selectivity is ascribable to the palladium coating since the CoWPfilm formation proceeds only on the palladium coating as being catalyzedtherewith. Once the surface of palladium is coated with CoWP, thesucceeding growth of the CoWP plated film proceeds based onauto-catalytic process using CoWP per se as a catalyst while keeping theselectivity. The surface of the conductive layer 123 exposed by theside-etching of the barrier layer 121 made of tungsten nitride iscovered with the cobalt tungsten phosphorus coating 124. The substrate91 is then cleaned in the electroless plating chamber 31. The cleaningis performed by, for example, washing with water.

[0065] The non-oxidative atmosphere described in the above can beproduced by introducing a rare gas such as argon or nitrogen into thechambers through the individual non-oxidative gas supply portions, andalso by exhausting a portion of the non-oxidative gas through theexhaust portions, so as to maintain the non-oxidative gas atmosphere atpredetermined pressures in the chambers.

[0066] Of the materials described in the above embodiment, the materialfor the barrier layer 121 is not limited to tungsten nitride at all, andmay be replaced with any other materials having a similar function, suchas tantalum nitride, or the like. While the above description dealt withthe technique by which the cobalt tungsten phosphorus coating 124 isformed on the copper-made conductive layer 123 left in the groove 116,the present invention is also applicable to a technique by which a plugmade of copper or a copper alloy is formed in the connection hole, andan upper surface of the plug is coated with the cobalt tungstenphosphorus coating, by way of example.

[0067] In the foregoing manufacturing method, the substrate after thecleaning may be spin-dried by rotating the holder at a high speed.

[0068] The second method for manufacturing a semiconductor device cansuccessively accomplish electrolytic plating, electrolytic polishing andelectroless plating without exposing the substrate 91 to an oxidativeatmosphere, and can also accomplish annealing as being continued fromthe electrolytic plating, electrolytic polishing or electroless plating,so that TAT will considerably be shortened as compared with that in theconventional manufacturing method in which the individual processes wereaccomplished by wandering from apparatus to apparatus, each of which isonly responsible for a single processing.

[0069] The above-described method for manufacturing a semiconductordevice removes the barrier layer 121 on the surface of the thirdinsulating film 115 so that the upper end of the barrier layer 121 leftin the concave portion (groove) 116 falls between the side plane of theconductive layer 123 and the side wall of the groove 116, and thereafterforms the cobalt tungsten phosphorus coating 124 so as to come intocontact with the barrier layer 121 at the side portion of the conductivelayer 123 and so as to selectively cover the conductive layer 123 at theopening side of the groove 116. Accordingly, the cobalt tungstenphosphorus coating 124 is formed so as to come into contact with thebarrier layer 121 at the side portion of the conductive layer 123 and soas to selectively cover the conductive layer 123 at the opening side ofthe groove 116. Since the cobalt tungsten phosphorus coating 124 isunlikely to provide a predominant diffusion path of copper at theinterface with the copper, wiring formed of the conductive layer 123will be ensured to have an excellent electro-migration resistance(reliability).

[0070] The foregoing description dealt with the case in which thebarrier layer 121 on the surface of the third insulating film 115 isremoved by wet etching using hydrogen peroxide solution. It is a generalpractice to perform over-etching so as to ensure thorough removal of thebarrier layer 121 on the surface of the third insulating film 115. As aresult, the upper end of the barrier layer 121 left in the groove 116will fall between the side plane of the conductive layer 123 and theside wall of the groove 116. The barrier layer 121 formed on the sidewall of the groove 116 is removed so that the upper end thereof comescloser to the bottom of the groove 116 than the surface level of theconductive layer 123. Accordingly, the cobalt tungsten phosphoruscoating 124 is formed so as to contact with the barrier layer 121 at theside portion of the conductive layer 123.

[0071] Since the cobalt tungsten phosphorus coating 124 thus comes intocontact with the barrier layer 121 at the side portion of the conductivelayer 123, the conductive layer 123 will be brought in a state that itis surrounded by the barrier layer 121 and the cobalt tungstenphosphorus coating 124. Moreover, the contact portion thereof will belocated at the side portion of the conductive layer 123, which allowsthe cobalt tungsten phosphorus coating 124 to come into close contactwith the conductive layer 123 at the top surface and the side planethereof, to thereby make the cobalt tungsten phosphorus coating 124unlikely to be peeled off. This also enhance close connection betweenthe cobalt tungsten phosphorus coating 124 and the barrier layer 121, sothat copper diffusion into the conductive layer can successfully beblocked by the cobalt tungsten phosphorus coating 124 and the barrierlayer 121. In addition, the conductive layer 123 can be prevented frombeing oxidized since oxygen diffusion thereto is also blocked.

[0072] Use of the cobalt tungsten phosphorus coating 124 is alsoadvantageous in that achieving an excellent electro-migration resistance(reliability) even when copper having a chemically unstable surface isused, since the interface between the copper and the cobalt tungstenphosphorus does not provide a diffusion path for the copper.

[0073] The coating over the copper surface likely to be oxidized withthe cobalt tungsten phosphorus coating 124 is also advantageous sincethe film will not increase parasitic capacitance of the whole wiringsystem.

[0074] It is also advantageous that the cobalt tungsten phosphoruscoating 124 can function as an anti-oxidative film, which allows directfilm formation of a low dielectric-constant insulating film withoutforming a silicon nitride film, which contributes to a considerablereduction in parasitic resistance of the whole wiring system.

[0075] As has been described in the above, the first semiconductormanufacturing apparatus according to the present invention cansuccessively accomplish electrolytic plating and electrolytic polishingin a single apparatus, since the apparatus has an electrolytic platingchamber and an electrolytic polishing chamber, both of which areconnected to a conveying chamber having equipped with a conveyinginstrument. Moreover, the substrate can successively be transferredsimply through the conveying chamber only, without exposing thesubstrate to the air, so that TAT can considerably be shortened. Theapparatus is also advantageous in that the costs for the consumablematerials are not so expensive as in CMP, since the removal step reliesupon electrolytic polishing, not upon CMP.

[0076] The second semiconductor manufacturing apparatus according to thepresent invention can successively accomplish electrolytic plating,electrolytic polishing, electroless plating and annealing in a singleapparatus, since the apparatus has an electrolytic plating chamber, anelectrolytic polishing chamber, an electroless plating chamber and anannealing chamber, all of which are connected to a conveying chamberhaving equipped with a conveying instrument. Moreover, the substrate cansuccessively be transferred simply through the conveying chamber only,without exposing the substrate to the air, so that TAT can considerablybe shortened. The apparatus is also advantageous in that the costs forthe consumable materials are not so expensive as in CMP, since theremoval step relies upon electrolytic polishing, not upon CMP.

[0077] The first method for manufacturing a semiconductor deviceaccording to the present invention can successively accomplishelectrolytic plating and electrolytic polishing, so that TAT willconsiderably be shortened as compared with that in the conventionalmanufacturing method in which the individual processes were accomplishedby wandering from apparatus to apparatus, each of which is onlyresponsible for a single processing.

[0078] The second method for manufacturing a semiconductor deviceaccording to the present invention can successively accomplishelectrolytic plating, electrolytic polishing and electroless platingwithout exposing the substrate to an oxidative atmosphere, and can alsoaccomplish annealing as being continued from the electrolytic plating,electrolytic polishing or electroless plating, so that TAT willconsiderably be shortened as compared with that in the conventionalmanufacturing method in which the individual processes were accomplishedby wandering from apparatus to apparatus, each of which is onlyresponsible for a single processing.

What is claimed is:
 1. A semiconductor manufacturing apparatuscomprising: an electrolytic plating chamber with which an electrolyticplating apparatus responsible for electrolytic plating of a substrate isconstructed; an electrolytic polishing chamber with which anelectrolytic polishing apparatus responsible for electrolytic polishingof the substrate is constructed; and a conveying chamber havinginstalled therein a conveying instrument responsible forloading/unloading of the substrate to or from said electrolytic platingchamber and to or from said electrolytic polishing chamber, and beingconnected respectively to said electrolytic plating chamber and saidelectrolytic polishing chamber.
 2. The semiconductor manufacturingapparatus as claimed in claim 1, wherein said electrolytic platingchamber with which the electrolytic plating apparatus is constructedcomprises: a holder for holding the substrate; a cup provided so as tooppose to said holder and is capable of forming a closed space, intowhich an electrolytic plating solution can be filled, together with thesubstrate held by said holder; and a nozzle for supplying a processliquid onto a surface of the substrate held by said holder.
 3. Thesemiconductor manufacturing apparatus as claimed in claim 2, whereinsaid process liquid comprises a cleaning liquid.
 4. The semiconductormanufacturing apparatus as claimed in claim 1, wherein said electrolyticpolishing chamber with which the electrolytic polishing apparatus isconstructed comprises: a holder for holding the substrate; a cupprovided so as to oppose to said holder and is capable of forming aclosed space, into which an electrolytic polishing solution can befilled, together with the substrate held by said holder; and a nozzlefor supplying a process liquid onto a surface of the substrate held bysaid holder.
 5. The semiconductor manufacturing apparatus as claimed inclaim 4, wherein said nozzle for supplying the process liquid comprises:a nozzle for supplying a cleaning liquid; and a nozzle for supplying anetching solution.
 6. A semiconductor manufacturing apparatus comprising:an electrolytic plating chamber with which an electrolytic platingapparatus responsible for electrolytic plating of a substrate isconstructed; an electrolytic polishing chamber with which anelectrolytic polishing apparatus responsible for electrolytic polishingof the substrate is constructed; an electroless plating chamber withwhich an electroless plating apparatus responsible for electrolessplating of the substrate is constructed; an annealing chamber with whichan annealing apparatus responsible for annealing of the substrate isconstructed; and a conveying chamber having installed therein aconveying instrument responsible for loading/unloading of the substrateto or from said electrolytic plating chamber, to or from saidelectrolytic polishing chamber, to or from said electroless platingchamber, and to or from said annealing chamber, and being connectedrespectively to said electrolytic plating chamber, said electrolyticpolishing chamber, said electroless plating chamber and said annealingchamber.
 7. The semiconductor manufacturing apparatus as claimed inclaim 6, wherein: said conveying chamber is further connected with aliquid treatment chamber for supplying a process liquid, and saidconveying instrument is responsible for loading/unloading of thesubstrate to or from said electrolytic plating chamber, to or from saidelectrolytic polishing chamber, to or from said electroless platingchamber, and to or from said annealing chamber, and is also responsiblefor loading/unloading of the substrate to or from said liquid treatmentchamber.
 8. The semiconductor manufacturing apparatus as claimed inclaim 7, wherein said liquid treatment chamber comprises: a holder forholding the substrate; and a nozzle for supplying the process liquidonto a surface of the substrate held by said holder.
 9. Thesemiconductor manufacturing apparatus as claimed in claim 8, whereinsaid nozzle for supplying the process liquid comprises: a nozzle forsupplying a cleaning liquid; and a nozzle for supplying an etchingsolution.
 10. The semiconductor manufacturing apparatus as claimed inclaim 6, wherein said electrolytic plating chamber with which theelectrolytic plating apparatus is constructed comprises: a holder forholding the substrate; a cup provided so as to oppose to said holder andis capable of forming a closed space, into which an electrolytic platingsolution can be filled, together with the substrate held by said holder;and a nozzle for supplying a process liquid onto a surface of thesubstrate held by said holder.
 11. The semiconductor manufacturingapparatus as claimed in claim 10, wherein said process liquid comprisesa cleaning liquid.
 12. The semiconductor manufacturing apparatus asclaimed in claim 6, wherein said electrolytic polishing chamber withwhich the electrolytic polishing apparatus is constructed comprises: aholder for holding the substrate; a cup provided so as to oppose to saidholder and is capable of forming a closed space, into which anelectrolytic polishing solution can be filled, together with thesubstrate held by said holder; and a nozzle for supplying a processliquid onto a surface of the substrate held by said holder.
 13. Thesemiconductor manufacturing apparatus as claimed in claim 12, whereinsaid nozzle for supplying the process liquid comprises: a nozzle forsupplying a cleaning liquid; and a nozzle for supplying an etchingsolution.
 14. A method for manufacturing a semiconductor device, saidmethod comprising: a step of forming an electrolytic plated film byelectrolytic plating process on a substrate; and a step of successivelyremoving at least a part of the electrolytic plated film formed on thesubstrate by electrolytic polishing process without exposing thesubstrate to an oxidative atmosphere.
 15. The method for manufacturing asemiconductor device as claimed in claim 14, said method furthercomprising a step of annealing the residual electrolytic plated filmafter such electrolytic polishing.
 16. The method for manufacturing asemiconductor device as claimed in claim 14, said method furthercomprising, after said electrolytic polishing, a step of subjecting thesubstrate to chemical liquid treatment without exposing the substrate toan oxidative atmosphere.
 17. A method for manufacturing a semiconductordevice, said method comprising: a step of forming an electrolytic platedfilm by electrolytic plating process on a substrate; a step ofsuccessively removing at least a part of the electrolytic plated filmformed on the substrate by electrolytic polishing process withoutexposing the substrate after the electrolytic plating to an oxidativeatmosphere; a step of annealing the substrate after the electrolyticpolishing without exposing the substrate to the oxidative atmosphere;and a step of forming an electroless plated film by electroless platingprocess on the annealed substrate without exposing the substrate to theoxidative atmosphere.
 18. The method for manufacturing a semiconductordevice as claimed in claim 17, said method further comprising, after theelectrolytic polishing, a step of subjecting the substrate to chemicalliquid treatment without exposing the substrate to an oxidativeatmosphere.